Method and apparatus for stable plasma processing
US8349128B2 · kind B2 · utility
20Cited by
43References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.