Method of bonding two substrates
US8349703B2 · kind B2 · utility
2Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2007 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Apr 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.