Method for improving electromigration lifetime of copper interconnection by extended post anneal
US8349724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Feb 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for improving electromigration of copper interconnection structures are provided. In one embodiment, a method of annealing a microelectronic device including forming microelectronic features on a substrate, forming a contact structure over the microelectronic features, and forming a copper interconnection structure over the contact structure. A passivation layer is deposited over the copper interconnection structure and the substrate is subjected to a first anneal at a temperature of about 350° C. to 400° C. for a time duration between about 30 minutes to about 1 hour. The substrate is subjected to a second anneal at a temperature of about 150° C. to 300° C. for a time duration between about 24 to about 400 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.