Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
US8349746B2 · kind B2 · utility
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11References
8Claims
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Key dates
| Filing date | Feb 23, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.