Structure of porous low-k layer and interconnect structure
US8350246B2 · kind B2 · utility
1Cited by
11References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2011 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Mar 2, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24992
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.