Memory with high dielectric constant antifuses adapted for use at low voltage
US8350299B2 · kind B2 · utility
1Cited by
20References
30Claims
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Key dates
| Filing date | Jul 14, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Aug 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.