Feng Li
9Patents
1h-index
13Co-inventors
44Inventor score
Filing activity: Jun 22, 2005 → Apr 7, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7212454B2 | Method and apparatus for programming a memory array | Physics | 21 | Expired |
| US8350299B2 | Memory with high dielectric constant antifuses adapted for use at low voltage | Electricity | 1 | Active |
| US7781805B2 | Memory with high dielectric constant antifuses adapted for use at low voltage | Electricity | 1 | Active |
| US8686476B2 | Resistance-switching memory cells adapted for use at low voltage | Electricity | 1 | Active |
| US8314023B2 | Methods involving memory with high dielectric constant antifuses adapted for use at low voltage | Electricity | 0 | Active |
| US11004970B2 | Mirror device structure for power MOSFET and method of manufacture | Electricity | 0 | Active |
| US10297454B2 | Semiconductor device and fabrication method thereof | Electricity | 0 | Active |
| US9006795B2 | Resistance-switching memory cells adapted for use at low voltage | Electricity | 0 | Active |
| US11489072B2 | Mirror device structure for power MOSFET and method of manufacture | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.