Patent · US Active

Electrostatic discharge devices

US8350355B2 · kind B2 · utility

8Cited by

3References

33Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Kai Esmark · Schwanau, DE

Key dates

Filing date	Mar 1, 2010
Grant date	Jan 8, 2013
Priority date	—
Expiry date	Nov 6, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Electrostatic discharge devices and methods of forming thereof are disclosed. In one embodiment, a semiconductor device includes an electrostatic discharge (ESD) device region disposed within a semiconductor body. A first ESD device is disposed in a first region of the ESD device region, and a second ESD device disposed in a second region of the ESD device region. The second region is separated from the first region by a first trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.