Relaxed-pitch method of aligning active area to digit line

US8354317B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Anton P. Eppich · Boise, US

Key dates

• Filing date: Mar 10, 2011
• Grant date: Jan 15, 2013
• Expiry date: Mar 23, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/00

Abstract

According to one aspect of the invention, a memory device is disclosed. The memory device comprises a substantially linear active area comprising a source and at least two drains defining a first axis. The memory device further comprises at least two substantially parallel word lines, at least a portion of a first word line located between a first drain and the source, and at least a portion of a second word line located between a second drain and the source, which word lines define a second axis. The memory device further comprises a digit line coupled to the source, wherein the digit line forms a substantially zig-zag pattern.