Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
US8354322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2011 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.