Methods for forming metal-germanide layers and devices obtained thereby
US8354344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2008 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Sep 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to the field of semiconductor processing and, more particularly, to the formation of low resistance layers on germanium substrates. One aspect of the present invention is a method comprising: providing a substrate on which at least one area of a germanium layer is exposed; depositing over the substrate and said germanium area a metal, e.g., Co or Ni; forming over said metal, a capping layer consisting of a silicon oxide containing layer, of a silicon nitride layer, or of a tungsten layer, preferably of a SiO2 layer; then annealing for metal-germanide formation; then removing selectively said capping layer and any unreacted metal, wherein the temperature used for forming said capping layer formation is lower than the annealing temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.