Microcavity light emitting diode method of manufacture
US8354679B1 · kind B1 · utility
58Cited by
78References
26Claims
0Family size
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Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.