Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods
US8354719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2010 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Feb 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.