Patent · US Active

Semiconductor device with crack prevention ring

US8354734B2 · kind B2 · utility

7Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2009
Grant dateJan 15, 2013
Priority date
Expiry dateDec 23, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.