Substrate processing method
US8356424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2010 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method comprises the step of subjecting a substrate to drying processing in at least one of a processing section and an interface, wherein the step of subjecting the substrate to the drying processing comprises the steps of: rotating the substrate at a first rotational speed around an axis perpendicular to the substrate, while holding the substrate horizontally, forming a liquid layer on the substrate in a state where the substrate is rotated at the first rotational speed, gradually and continuously increasing the rotational speed of the substrate to a second rotational speed after the formation of the liquid layer, and starting discharging a gas to the liquid layer on the substrate while the substrate is rotated at the second rotational speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.