Flowable dielectric equipment and processes
US8357435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.