Patent · US Active

Seed layer passivation

US8357599B2 · kind B2 · utility

5Cited by

3References

21Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Callie A. Schieffer · Kalispell, US
Ismail Emesh · Gilbert, US

Key dates

Filing date	Feb 10, 2011
Grant date	Jan 22, 2013
Priority date	—
Expiry date	Feb 10, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1461
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of processing a microfeature workpiece generally includes depositing a first conducting layer, at least partially reducing oxides on the first conducting layer to provide a reduced first conducting layer, and exposing the reduced first conducting layer to a substantially oxygen-free environment to provide a passivated first conducting layer. A microfeature workpiece generally includes a first conducting layer, a monolayer directly on the first conducting layer, and a second conducting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.