Work function adjustment in high-k gate stacks for devices of different threshold voltage

US8357604B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jan Hoentschel · Dresden, DE
• Sven Beyer · Dresden, DE
• Thilo Scheiper · Dresden, DE

Key dates

• Filing date: Oct 15, 2010
• Grant date: Jan 22, 2013
• Expiry date: Apr 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated semiconductor devices, different threshold voltage levels for transistors may be set in an early manufacturing stage, i.e., prior to patterning the gate electrode structures, by using multiple diffusion processes and/or gate dielectric materials. In this manner, substantially the same gate layer stacks, i.e., the same electrode materials and the same dielectric cap materials, may be used, thereby providing superior patterning uniformity when applying sophisticated etch strategies.