Frequency doubling using a photo-resist template mask
US8357618B2 · kind B2 · utility
5Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.