Semiconductor device having multiple storage regions
US8357965B2 · kind B2 · utility
1Cited by
25References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/699
Abstract
One embodiment in accordance with the invention can include a semiconductor device that includes: a groove that is formed in a semiconductor substrate; bottom oxide films that are formed on both side faces of the groove; two charge storage layers that are formed on side faces of the bottom oxide films; top oxide films that are formed on side faces of the two charge storage layers; and a silicon oxide layer that is formed on the bottom face of the groove, and has a smaller film thickness than the top oxide films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.