Flash memory programming with data dependent control of source lines
US8358543B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques for programming a non-volatile memory device, such as a Flash memory, include floating source lines of memory cells based on a data pattern that is being programmed to the memory device. The source lines to float are selected such that a distance between drain bit lines and source bit lines of different memory cells in a row is maximized. In this manner, leakage current between these drain bit lines and source bit lines can be decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.