Method for generating graphene structures
US8361813B1 · kind B1 · utility
10Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.