Sean Barstow
26Patents
6h-index
30Co-inventors
65Inventor score
Filing activity: Jun 6, 2001 → Oct 2, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8144498B2 | Resistive-switching nonvolatile memory elements | Physics | 101 | Active |
| US8143092B2 | Methods for forming resistive switching memory elements by heating deposited layers | Electricity | 88 | Active |
| US8294219B2 | Nonvolatile memory element including resistive switching metal oxide layers | Electricity | 31 | Active |
| US6696363B2 | Method of and apparatus for substrate pre-treatment | Electricity | 15 | Expired |
| US7863087B1 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Electricity | 13 | Active |
| US8361813B1 | Method for generating graphene structures | Electricity | 10 | Active |
| US7977153B2 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Electricity | 4 | Active |
| US8647894B2 | Method for generating graphene structures | Electricity | 3 | Active |
| US8873276B2 | Resistive-switching nonvolatile memory elements | Physics | 3 | Active |
| US8367463B2 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Electricity | 3 | Active |
| US8318573B2 | Nonvolatile memory elements | Electricity | 2 | Active |
| US8575027B1 | Sputtering and aligning multiple layers having different boundaries | Chemistry; Metallurgy | 2 | Active |
| US8877550B2 | Methods for forming resistive switching memory elements by heating deposited layers | Electricity | 1 | Active |
| US9297775B2 | Combinatorial screening of metallic diffusion barriers | Physics | 1 | Active |
| US8513117B2 | Process to remove Ni and Pt residues for NiPtSi applications | Electricity | 1 | Active |
| US8664014B2 | High productivity combinatorial workflow for photoresist strip applications | Electricity | 0 | Active |
| US8765567B2 | Nonvolatile memory elements | Electricity | 0 | Active |
| US9397292B2 | Methods for forming resistive switching memory elements by heating deposited layers | Electricity | 0 | Active |
| US9030862B2 | Resistive-switching nonvolatile memory elements | Physics | 0 | Active |
| US8592282B2 | Nonvolatile memory elements | Electricity | 0 | Active |
| US8441838B2 | Resistive-switching nonvolatile memory elements | Physics | 0 | Active |
| US8889547B2 | Sputtering and aligning multiple layers having different boundaries | Chemistry; Metallurgy | 0 | Active |
| US9029232B2 | Nonvolatile memory elements | Electricity | 0 | Active |
| US8784572B2 | Method for cleaning platinum residues on a semiconductor substrate | Electricity | 0 | Active |
| US8524528B2 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.