Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device
US8361862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method for manufacturing a nonvolatile semiconductor memory device, the device including a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction and a semiconductor pillar piercing the stacked structural unit in the first direction, the method includes: forming a stacked unit including a core material film alternately stacked with a sacrificial film on a major surface of a substrate perpendicular to the first direction; making a trench in the stacked unit, the trench extending in the first direction and a second direction in a plane perpendicular to the first direction; filling a filling material into the trench; removing the sacrificial film to form a hollow structural unit, the hollow structural unit including a post unit supporting the core material film on the substrate, the post unit being made of the filling material; and forming the stacked structural unit by stacking one of the insulating films and one of the electrode films on a surface of the core material film exposed by removing the sacrificial film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.