Plasma dicing and semiconductor devices formed thereof
US8361884B2 · kind B2 · utility
2Cited by
4References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 22, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of forming a semiconductor device includes forming islands by forming deep trenches within scribe lines of a substrate. The islands have a first notch disposed on sidewalls of the islands. A first electrode stack is formed over a top surface of the islands. The back surface of the substrate is thinned to separate the islands. A second electrode stack is formed over a back surface of the islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.