Metal complex compositions and methods for making metal-containing films
US8362220B2 · kind B2 · utility
14Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2008 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides compositions of matter useful as deposition agents for making structures, including thin film structures and hard coatings, on substrates and features of substrates. In an embodiment, for example, the present invention provides metal complexes having one or more diboranamide or diboranaphosphide ligands that are useful as chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) precusors for making thin film structures and coatings. Metal complex CVD precursors are provided that possess volitilities sufficiently high so as to provide dense, smooth and homogenous thin films and coatings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.