Generating cut mask for double-patterning process
US8365108B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 6, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Apr 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.