Plasma cleaning method and plasma CVD method
US8366953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma cleaning method is performed in a plasma CVD apparatus for depositing a silicon nitride film on a surface of a target substrate, and includes a stage (S1) of supplying a cleaning gas containing NF3 gas into a process container, thereby removing extraneous deposits formed on portions inside the process container; a stage (S2) of supplying a gas containing hydrogen gas into the process container and generating plasma thereof, thereby removing residual fluorine inside the process container; and a stage (S3) of supplying a gas containing a rare gas into the process container and generating plasma thereof, thereby removing residual hydrogen inside the process container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.