Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control
US8367303B2 · kind B2 · utility
1Cited by
7References
29Claims
0Family size
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Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O2, SO2 and a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising O2 and a gas comprising SO2 and a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O2 and SO2 dry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.