Method for forming semiconductor fuses in a semiconductor device comprising metal gates

US8367504B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jens Heinrich · Radeberg, DE
• Ralf Richter · Dresden, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Feb 5, 2013
• Expiry date: May 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.