Patent · US Active

Integrated circuit with capacitor and method for the production thereof

US8367514B2 · kind B2 · utility

4Cited by

4References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Goebel · Wolfsberg, AT
Johann Helneder · Landsham, DE
Heinrich Körner · Bogen, DE
Andrea Mitchell · Munich, DE
Markus Schwerd · Holzkirchen, DE
Martin Seck · Birkenfeld, DE
Holger Torwesten · Neubiberg, DE

Key dates

Filing date	Jan 29, 2010
Grant date	Feb 5, 2013
Priority date	—
Expiry date	Jul 28, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.