Cyclical epitaxial deposition and etch
US8367528B2 · kind B2 · utility
557Cited by
233References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2009 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Mar 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.