Susceptor for MOCVD reactor
US8372204B2 · kind B2 · utility
529Cited by
22References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.