Solid state devices with semi-polar facets and associated methods of manufacturing
US8372671B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has a sidewall extending away from the substrate surface. The solid state lighting device also includes a semiconductor material on at least a portion of the sidewall of the epitaxial silicon structure. The semiconductor material has a semiconductor surface that is spaced apart from the substrate surface and is located on a semi-polar or non-polar crystal plane of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.