Plasma oxidation processing method, plasma processing apparatus and storage medium
US8372761B2 · kind B2 · utility
6Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2008 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.