Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8373150B2 · kind B2 · utility
1Cited by
57References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Mar 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.