Patent · US Active

Sensor device having a structure element

US8373240B2 · kind B2 · utility

4Cited by

32References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Klaus Elian · Alteglofsheim, DE
Georg Meyer-Berg · Birkenfeld, DE
Horst Theuss · Wenzenbach, DE

Key dates

Filing date	Jan 26, 2012
Grant date	Feb 12, 2013
Priority date	—
Expiry date	Jan 26, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.