Resistive memory using SiGe material
US8374018B2 · kind B2 · utility
78Cited by
89References
23Claims
0Family size
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Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jan 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.