Programming phase change memories using ovonic threshold switches
US8374022B2 · kind B2 · utility
16Cited by
1References
28Claims
0Family size
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Key dates
| Filing date | Dec 21, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Dec 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.