Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
US8374025B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate being made of a magnetic layer and an insulating layer. The magnetic layer is switchable and formed on top of the barrier layer. The free layer is capable of switching its magnetization to a parallel or an anti-parallel state relative to the magnetization of the fixed layer during a write operation when bidirectional electric current is applied across the STTMRAM element. Magnetic layers of the laminates are ferromagnetically coupled to switch together as a single domain during the write operation and the magnetization of the fixed and free layers and the magnetic layers of the laminates have either in-plane or perpendicular anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.