Nonvolatile semiconductor memory device
US8374033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Feb 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes a multilayer structure including electrode films and inter-electrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the multilayer structure in the first direction; a memory layer provided between the semiconductor pillar and the electrode films; a inner insulating film provided between the memory layer and the semiconductor pillar; a outer insulating film provided between the memory layer and the electrode films; and a wiring electrically connected to the first semiconductor pillar. In erasing operation, the control unit sets the first wiring at a first potential and sets the electrode film at a second potential lower than the first potential, and then sets the first wiring at a third potential and sets the electrode film at a fourth potential higher than the third potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.