Method for manufacturing silicon wafer and silicon wafer manufactured by this method
US8377202B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 17, 2007 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jun 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon wafer to be processed is subjected to heat treatment at a temperature of not less than 1100 degrees C. for not less than 0.01 msec to not more than 1 sec, to thereby make the surface layer defect-free. As a result of this, there is provided a method for manufacturing a silicon wafer, in which a DZ layer without generation of crystal defects from the front surface to a constant depth can be uniformly formed, and oxide precipitates having a steep profile inside the wafer can be secured and controlled with a high degree of accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.