Phase change memory random access device using single-element phase change material
US8378328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2008 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Nov 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.