Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method
US8379196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jul 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/8803
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.