Double patterning mask set and method of forming thereof
US8383299B2 · kind B2 · utility
3Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double patterning mask set includes a first mask having a first set of via patterns, and a second mask having a second set of via patterns. The first set of via patterns includes at least two via patterns arranged along a diagonal direction, each of the at least two via patterns has at least a truncated corner. The first set of via patterns and the second set of via patterns are interlacedly arranged along a horizontal direction and a vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.