Patent · US Active

Method for producing field effect transistors with a back gate and semiconductor device

US8383464B2 · kind B2 · utility

1Cited by

0References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Claire Fenouillet-Beranger · Grenoble, FR
Philippe Coronel · Barraux, FR

Key dates

Filing date	Nov 8, 2010
Grant date	Feb 26, 2013
Priority date	—
Expiry date	Jan 7, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The method for producing a field effect transistor on a substrate comprising a support layer, a sacrificial layer and a semi-conducting layer comprises forming an active area in the semi-conducting layer. The active area is delineated by a closed peripheral insulation pattern and comprises an additional pattern made from insulating material. The method also comprises etching the insulating material of the additional pattern to access the sacrificial layer, etching the sacrificial layer resulting in formation of a first cavity, forming a dielectric layer on a top wall of the first cavity, and depositing an electrically conducting layer in the first cavity. The closed peripheral insulation pattern is formed through the semi-conducting layer and the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.