Semiconductor device formed by a replacement gate approach based on an early work function metal

US8383500B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Gerd Marxsen · Radebeul, DE
• Joachim Metzger · Rockenberg, DE
• Robert Binder · Dresden, DE
• Markus Lenski · Dresden, DE

Key dates

• Filing date: Oct 28, 2010
• Grant date: Feb 26, 2013
• Expiry date: Jan 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.