Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US8383525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2008 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | May 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.