Phase-change random access memory device and method of manufacturing the same
US8384135B2 · kind B2 · utility
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5References
14Claims
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Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
Abstract
A phase-change random access memory device includes a semiconductor substrate, a bottom electrode structure formed on the semiconductor substrate, a cylindrical bottom electrode contact that includes a conductive material layer, which is in contact with the bottom electrode, and a cylindrical phase-change material layer that is in contact with the bottom electrode contact. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.