Thermalization of gaseous precursors in CVD reactors
US8388755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.